TPCA8022-H Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

I_D – V_DS
20
10
5
6
4.8
Common source
Ta = 25°C
8
16
Pulse test
4.7
4.6
12
4.5
8
4.3
4
VGS = 4V
0
0
0.2
0.4
0.6
0.8
1
Drain-source voltage V_DS (V)
TPCA8022-H
20
4.8
10
5
8
6
16
I_D – V_DS
Common source
4.7
Ta = 25°C
Pulse test
4.6
12
4.5
8
4.4
4
VGS = 4.2V
0
0
1
2
3
4
5
Drain-source voltage V_DS (V)
40
Common source
VDS = 10 V
Pulse test
30
I_D – V_GS
20
Ta = −55°C
100
10
25
0
0
2
4
6
8
10
Gate-source voltage V_GS (V)
V_DS – V_GS
1.0
Common source
Ta = 25°C
Pulse test
0.8
0.6
ID = 22 A
0.4
11
0.2
5.5
0
0
2
4
6
8
10
Gate-source voltage V_GS (V)
1000
Common source
VDS = 10 V
Pulse test
100
⎪Y_fs⎪ – I_D
Ta = −55°C
10
25
100
1
0.1
0.1
1
10
100
Drain current I_D (A)
R_{DS (ON)} – I_D
100
Common source
Ta = 25℃
Pulse test
VGS = 10 V
10
1
0.1
1
10
100
Drain current I_D (A)
4
2007-02-09