TLP108 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – PHOTOCOUPLER GaAℓAs IRED & PHOTO-IC

TLP108
Switching Characteristics
(Unless otherwise specified, Ta = -40 to 100°C, VCC = 4.5 to 20 V)
CHARACTERISTIC
TEST
SYMBOL _CIRCUIT
CONDITION
Propagation Delay Time
to Logic High output
tpLH
IF=3→0mA
Propagation Delay Time
to Logic Low output
Switching Time Dispersion
between ON and OFF
tpHL
|tpHL-
tpLH|
IF=0→3mA
7, 8
―
Rise Time (10 – 90 %)
Fall Time (90 – 10 %)
Common Mode transient
Immunity at High Level Output
Common Mode transient
Immunity at Low Level Output
tr
tf
CMH
CML
IF=3→0mA , VCC=5V
IF=0→3mA , VCC=5V
VCM=1000Vp-p, IF=0mA,
9
VCC=20V,Ta=25°C
VCM=1000Vp-p, IF=5mA,
VCC=20V,Ta=25°C
*All typical values are at Ta=25°C
MIN. TYP.
30
150
30
150
―
―
―
30
―
30
-10000 ―
10000
―
MAX.
250
250
220
75
75
―
―
UNIT
ns
ns
ns
ns
ns
V/μs
V/μs
Test Circuit 1 : VOL
IF
→
1
VC _C ⁶
5
↑
3
GN D ⁴
SH IEL D
0.1 μF
VOL IOL
V↑
Test Circuit 2 : VOH
VCC
1
6
VCC
V _OH IOH
5
V
↑
VCC
0 .1μF
3
GN D ⁴
S HIELD
Test Circuit 3 : ICCL
IF ₁
→
↑
3
6
VCC
ICCL
A
5
GND ⁴
SHIEL D
0 .1μF ^VCC
Test Circuit 4 : IC _CH
1
6 ^ICCH
VCC
A
5
0.1 μF
3
GND ⁴
SHIEL D
VCC
Test Circuit 5 : IOSL
Test Circuit 6 : IOS _H
I_{→F 1}
↑
3
6
VC _C
5
4
GND
S HIE LD
0. 1μF
A
IO _SL
VO
VCC
1
6
VCC
5 ^{0 .1μF}
A
VO
3
4
GND
IO _SH
VCC
S HIE LD
4
2008-08-27