TK34E10N1 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – Switching Voltage Regulators

TK34E10N1
6.4. Source-Drain Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC)
(Note 5)
I_DR

Reverse drain current (pulsed)
(Note 5)
I_DRP

Diode forward voltage
V_DSF I_DR = 34 A, V_GS = 0 V
Reverse recovery time
Reverse recovery charge
(Note 6)
(Note 6)
t_rr
I_DR = 34 A, V_GS = 0 V
Q_rr
-dI_DR/dt = 100 A/µs
Note 5: Ensure that the channel temperature does not exceed 150.
Note 6: Ensure that V_DS peak does not exceed V_DSS.
7. Marking
Min Typ. Max Unit


34
A


147


-1.2
V

61

ns

110

nC
Fig. 7.1 Marking
4
2012-02-16
Rev.1.0