TK19A45D Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

R_{DS (ON)} − Tc
1
Common source
VGS = 10 V
Pulse Test
0.8
0.6
19
0.4
9.5
ID = 4.8 A
0.2
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
TK19A45D
100
Common source
Tc = 25°C
VGS = 0 V
Pulse Test
I_DR − V_DS
10
1
0.1
0
−0.3 −0.6 −0.9 −1.2 −1.5 −1.8
Drain-source voltage VDS (V)
10000
1000
100
Capacitance – V_DS
Ciss
Coss
10
Common source
VGS = 0 V
f =1MHz
Tc = 25°C
1
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
V_th − Tc
5
4
3
2
Common source
1 VDS = 10 V
ID = 1mA
Pulse Test
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
P_D − Tc
80
60
40
20
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input / output
characteristics
500
20
400
VDS
300
180
16
VDD = 90 V
360
12
200
100
0
0
VGS
8
Common source
ID = 19 A
Tc = 25°C
4
Pulse Test
0
20
40
60
80
Total gate charge Qg (nC)
4
2010-04-14