TIM7785-60SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7785-60SL
Power Dissipation(PT) vs. Case Temperature(Tc)
200
100
0
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Power Characteristics
-10
VDS=10V
IDSset≅9.5A
-20 freq.=8.5GHz
∆f=5MHz
-30
-40
-50
-60
32
34
36
38
40
42
Pout(dBm) @Single carrier level
4