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TIM7785-16UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
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TIM7785-16UL
POWER DISSIPATION vs. CASE TEMPERATURE
100
80
60
40
20
0
0
40
80
120
160
200
Tc (â)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-20
VDS= 10V
IDSâ
4.4A
f= 8.1GHz
âf= 5MHz
-30
-40
-50
-60
27
29
31
33
35
37
Po(dBm), Single Carrier Level
4
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