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TIM7785-16SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
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TIM7785-16SL
POWER DISSIPATION vs. CASE TEMPERATURE
90
60
30
0
0
40
80
120
160
200
Tc (°C)
IM3 vs. Output Power Characteristics
-10
VDS=10V
IDSâ
4.4A
-20 freq.=8.1GHz
Îf=5MHz
-30
-40
-50
-60
27
29
31
33
35
37
Pout(dBm) @Single carrier level
4
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