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TIM7179-8UL_06 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=39.5dBm at 7.1GHz to 7.9GHz
TIM7179-8UL
Power Dissipation vs. Case Temperature
IM3 vs. Output Power Characteristics
VDS= 10V
IDS≅ 2.2A
f= 7.5GHz
∆f= 5MHz
Po(dBm), Single Carrier Level
4