TIM7179-45SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7179-45SL
Power Dissipation(PT) vs. Case Temperature(Tc)
130
110
ç
90
ç
70
ç
50
ç
30
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Power Characteristics
-10
VDS=10V
ç
IDS≅9.6A
-20 freq.=7.9GHz
∆f=5MHz
ç
-30
ç
-40
ç
-50
ç
-60
30
32
34
36
38
40
Pout(dBm) @Single carrier level
4