 English |
|
|
|
|
|
|
|
| TIM6472-8UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET | |||
| |||
| ◁ |
TIM6472-8UL
Power Dissipation vs. Case Temperature
IM3 vs. Output Power Characteristics
VDS= 10V
IDSâ
2.2A
f= 6.8GHz
âf= 5MHz
Po(dBm), Single Carrier Level
4
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese