TIM5964-8SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5964-8SL-422
Pow^POe^Wr ^ED^Ris^Ds^ISi^Sp^Ia^Pt^Aio^TIn^ONvs^VS. ^.C^Ca^As^Se^E T^TEe^Mm^Pp^Ee^RAra^Tt^Uu^Rr^Ee
50
45
40
35
30
25
20
15
10
5
0
0
40
80
120
160
200
T^Tc^c (⁽°^℃C⁾)
IMIM33vvss.. OOUuTtpPUuTt POoWwEeRr CCHhAaRrAaCcTtEeRriISsTtiIcCsS
-10
VDS= 10 V
IDS≅ 2.2 A
f= 6.3GHz
-20 ^{Δf= 5MHz}
-30
-40
-50
-60
24
26
28
30
32
34
Po (dBm), Single Carrier Level
Po(dBm), Single Carrier Level
4