TIM5964-4UL_09 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz

TIM5964-4UL
Power Dissipation vs. Case Temperature
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 1.1A
f= 6.15GHz
Δf= 5MHz
-30
-40
-50
-60
21
23
25
27
29
31
Po(dBm), Single Carrier Level
4