TIM5359-8UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=39.5dBm at 5.3GHz to 5.9GHz

TIM5359-8UL
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
0
40
80
120
160
200
Tc (°C)
IM3 vs. Output Power Characteristics
-10
VDS=10V
IDS≅2.2A
-20 ^freq.=5.9GHz
Δf=5MHz
-30
-40
-50
-60
24
26
28
30
32
34
Pout(dBm) @Single carrier level
4