TIM5053-8SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5053-8SL
Power Dissipation vs. Case Temperature
40
30
20
10
0
40
80
120
160
200
Tc (°C)
IM3 vs. Output Power Characteristics
-10
VDS=10V
IDS≅2.2A
-20 _freq.=5.3GHz
Δf=5MHz
-30
-40
-50
-60
24
26
28
30
32
34
Pout(dBm) @Single carrier level
4