TIM5053-16SL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM5053-16SL
Power Dissipation vs. Case Temperature
90
60
30
0
0
40
80
120
160
200
Tc (°C)
IM3 vs. Output Power Characteristics
-10
VDS=10V
IDS≅4.4A
-20 freq.=5.3GHz
Δf=5MHz
-30
-40
-50
-60
27
29
31
33
35
37
Pout(dBm) @Single carrier level
4