TIM4450-8UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=39.5dBm at 4.4GHz to 5.0GHz

TIM4450-8UL
Power Dissipation vs. Case Temperature
50
40
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 2.2A
f= 4.7GHz
Δf= 5MHz
-30
-40
-50
-60
24
26
28
30
32
34
Po(dBm), Single Carrier Level
4