TIM4450-16UL_09 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=42.5dBm at 4.4GHz to 5.0GHz

TIM4450-16UL
Power Dissipation vs. Case Temperature
100
80
60
40
20
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 4.4A
f= 4.7GHz
Δf= 5MHz
-30
-40
-50
-60
27
29
31
33
35
37
Po(dBm), Single Carrier Level
4