TIM3742-8UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM3742-8UL
POWER DISSIPATION vs. CASE TEMPERATURE
50
40
30
20
10
0
0
40
80
120
160
200
Tc (℃)
IM3 vs. OUTPUT POWER CHARACTERISTICS
-20
VDS= 10V
IDS≅ 2.2A
f= 3.95GHz
∆f= 5MHz
-30
-40
-50
-60
24
26
28
30
32
34
Po(dBm), Single Carrier Level
4