TIM3742-4SL-341 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM3472-4SL-341
P^Po^Ow^WEe^Rr ^DD^Ii^Ss^Ss^IPip^Aa^Tt^IOio^Nn^Vv^Ss^{. C}. ^AC^Sa^Es^Te^ET^Me^Pm^ERp^Ae^Tr^Ua^Rt^Eure
30
25
20
15
10
5
0
0
40
80
120
160
200
Tc (℃)
Tc(°C)
IM3 vs. Output Power Characteristics
-10
VDS= 10 V
IDS≅1.1A
freq.= 3.6GHz
-20 Δf= 5MHz
-30
IM
3 _-40
-50
-60
21
23
25
27
29
31
Po(dBm)@ Single Carrier Level
4