TIM3742-16SL-341 Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM3742-16SL-341
Power Dissipation vs. Case Temperature
Tc(°C)
IM3 vs. Output Power Characteristics
-10
VDS= 10 V
IDS≅4.4A
freq.= 3.45GHz
-20 ∆f= 5MHz
-30
-40
-50
-60
27
29
31
33
35
37
Po(dBm)@ Single Carrier Level
4