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TIM3438-12UL Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – HIGH POWER P1dB=41.5dBm at 3.4GHz to 3.8GHz | |||
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TIM3438-12UL
Power Dissipation vs. Case Temperature
100
80
60
40
20
0
0
40
80
120
160
200
Tc (â)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDSâ
3.2A
f= 3.6GHz
Îf= 5MHz
-30
-40
-50
-60
25
27
29
31
33
35
Po(dBm), Single Carrier Level
4
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