TIM1414-18L Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-18L
Power Dissipation vs. Case Temperature
100
80
60
PT(W)
40
20
0
0
40
80
120
160
200
Tc (°C)
IM3 vs. Output Power Characteristics
-20
VDS= 9V
IDSQ≅ 4.4A
f= 14.25GHz
Δf= 5MHz
-30
IM3(dBc)
-40
-50
-60
30
32
34
36
38
40
Po(dBm), Single Carrier Level
4