TIM1414-10LA Datasheet, PDF (4/4 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM1414-10LA
Power Dissipation(PT) vs. Case Temperature(Tc)
60
30
0
0
40
80
120
160
200
Tc( _°C )
IM3 vs. Output Power Characteristics
-10
VDS=9V
freq.=14.5GHz
-20
Δf=5MHz
-30
-40
-50
-60
24
26
28
30
32
34
Pout(dBm) @Single carrier level
4