TD62081 Datasheet, PDF (4/11 Pages) Toshiba Semiconductor – 8CH DARLINGTON SINK DRIVER

TD62081~084AP/CP/F/AF
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
AP, AF
CP
F
AP, AF
CP
Output Leakage
Current
F
AP, AF
TD62082 CP
F
AP, AF
TD62084 CP
F
Collector−Emitter Saturation Voltage
Input Current
TD62082AP /
CP / F / AF
TD62083AP /
CP / F / AF
TD62084AP /
CP / F / AF
Input Voltage
(Output On)
TD62082AP /
CP / F / AF
TD62083AP /
CP / F / AF
TD62084AP /
CP / F / AF
DC Current Transfer Ratio
Clamp Diode Reverse Current
Clamp Diode Forward
Voltage
CP
Input Capacitance
SYMBOL
I_CEX
V_{CE (sat)}
I_{IN (ON)}
I_{IN (OFF)}
V_{IN (ON)}
h_FE
I_R
V_F
C_IN
TEST
CIR−
TEST CONDITION
MIN
CUIT
V_CE = 50 V
V_CE = 100 V
Ta = 25°C ―
V_CE = 35 V
V_CE = 50 V
V_CE = 100 V
Ta = 85°C ―
1 ^{VCE = 35 V}
V_CE = 50 V
V_CE = 100 V
V_IN = 6 V
―
V_CE = 35 V
V_CE = 50 V
V_CE = 100 V
V_IN = 1 V
―
V_CE = 35 V
I_OUT = 350 mA, I_IN = 500 µA
―
2 I_OUT = 200 mA, I_IN = 350 µA
―
I_OUT = 100 mA, I_IN = 250 µA
―
V_IN = 17 V
―
2 ^{VIN = 3.85 V}
―
V_IN = 5 V
―
V_IN = 12 V
―
4 I_OUT = 500 µA, Ta = 85°C
50
V_CE = 2 V, I_OUT = 300 mA
―
V_CE = 2 V, I_OUT = 200 mA
―
V_CE = 2 V, I_OUT = 250 mA
―
5 ^{VCE = 2 V, IOUT = 300 mA}
―
V_CE = 2 V, I_OUT = 125 mA
―
V_CE = 2 V, I_OUT = 200 mA
―
V_CE = 2 V, I_OUT = 275 mA
―
V_CE = 2 V, I_OUT = 350 mA
―
2 V_CE = 2 V, I_OUT = 350 mA
1000
Ta = 25°C
6
Ta = 85°C
(Note) ―
(Note) ―
7 ^{IF = 350 mA}
―
I_F = 280 mA
―
―
―
Note: V_R = V_R MAX.
TYP.
―
―
―
―
1.3
1.1
0.9
0.82
0.93
0.35
1.0
65
―
―
―
―
―
―
―
―
―
―
―
―
―
15
MAX
50
100
500
500
1.6
1.3
1.1
1.25
1.35
0.5
1.45
―
13
2.4
2.7
3.0
5.0
6.0
7.0
8.0
―
50
100
2.0
1.8
―
UNIT
µA
V
mA
µA
V
µA
V
pF
4
2001-06-28