TC7SG00AFS Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

TC7SG00AFS
AC Electrical Characteristics (input t_r = t_f = 3 ns)
Characteristics
Symbol
Test Condition
C_L = 10 pF,
R_L = 1 MΩ
Propagation delay time
t_PLH
t_PHL
C_L = 15 pF,
R_L = 1 MΩ
C_L = 30 pF,
R_L = 1 MΩ
Input capacitance
C_IN
Power dissipation capacitance C_PD
⎯
(Note9)
V_CC (V)
0.9
1.1~1.3
1.4~1.6
1.65~
1.95
2.3~2.7
3.0~3.6
0.9
1.1~1.3
1.4~1.6
1.65~
1.95
2.3~2.7
3.0~3.6
0.9
1.1~1.3
1.4~1.6
1.65~
1.95
2.3~2.7
3.0~3.6
3.6
0.9~3.6
Ta = 25°C
Ta = −40~85°C
Unit
Min Typ. Max Min Max
⎯ 26.9 ⎯
⎯
⎯
⎯ 10.9 18.4 1.0 34.2
⎯
5.9 8.5 1.0 10.0
⎯
4.5 6.2 1.0 6.7
⎯
2.9 3.9 1.0 4.4
⎯
2.2 3.1 1.0 3.7
⎯ 30.0 ⎯
⎯
⎯
⎯ 12.0 21.5 1.0 37.2
⎯
6.5 9.3 1.0 11.2
ns
⎯
5.0 6.9 1.0 7.1
⎯
3.2 4.4 1.0 5.0
⎯
2.5 3.4 1.0 3.9
⎯ 45.0 ⎯
⎯
⎯
⎯ 18.0 29.6 1.0 56.0
⎯
8.9 13.1 1.0 15.9
⎯
6.9 9.2 1.0 9.6
⎯
4.4 5.7 1.0 6.1
⎯
3.5 4.4 1.0 4.8
⎯
3
⎯
⎯
⎯
pF
⎯
6
⎯
⎯
⎯
pF
Note 9:
C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_{CC (opr)} = C_PDï½¥V_CCï½¥f_IN + I_CC
4
2007-11-01