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TC7MET373AFK Datasheet, PDF (4/7 Pages) Toshiba Semiconductor – Octal D-Type Latch with 3-State Output
TC7MET373AFK
Electrical Characteristics
DC Characteristics
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta = −40~85°C
Unit
VCC (V) Min Typ. Max Min Max
High level
VIH
Input voltage
Low level
VIL
⎯
4.5~5.5 2.0
⎯
⎯
2.0
⎯
V
⎯
4.5~5.5 ⎯
⎯
0.8
⎯
0.8
High level
Output voltage
High level
VOH
VIN = VIH IOH = −50 μA
or VIL
IOH = −8 mA
4.5
4.5
4.4 4.5
3.94 ⎯
⎯
4.4
⎯
⎯ 3.80 ⎯
V
VOL
VIN = VIH IOL = 50 μA
or VIL
IOL = 8 mA
4.5
4.5
⎯
⎯
0
0.1
⎯
0.1
⎯ 0.36 ⎯ 0.44
VIN = VIH or VIL
3-state output off-state current IOZ
VOUT = VCC or GND
5.5
ー
ー ±0.25 ー ±2.50 μA
Input leakage current
IIN VIN = 5.5 V or GND
0~5.5 ⎯
⎯ ±0.1 ⎯ ±1.0 μA
ICC VIN = VCC or GND
5.5
⎯
⎯
4.0
⎯ 40.0 μA
Quiescent supply current
Per input: VIN = 3.4 V
ICCT
5.5
⎯
⎯ 1.35 ⎯ 1.50 mA
Other input: VCC or GND
Output leakage current
IOPD VOUT = 5.5 V
0
⎯
⎯
0.5
⎯
5.0
μA
Timing Requirements (Input: tr = tf = 3 ns)
Characteristics
Minimum pulse width
(LE)
Minimum set-up time
Minimum hold time
Symbol
tw (H)
tw (L)
ts
th
Test Condition
⎯
⎯
⎯
Ta = 25°C Ta = −40~85°C
Unit
VCC (V) Typ. Limit
Limit
5.0 ± 0.5 ⎯
6.5
8.5
ns
5.0 ± 0.5 ⎯
1.5
1.5
ns
5.0 ± 0.5 ⎯
3.5
3.5
ns
4
2007-10-19