TC74VHC00F_07 Datasheet, PDF (4/9 Pages) Toshiba Semiconductor – Quad 2-Input NAND Gate

TC74VHC00F/FN/FT/FK
AC Characteristics (input: t_r = t_f = 3 ns)
Characteristics
Symbol
Test Condition
Ta = 25°C
Ta =
−40 to 85°C _Unit
V_CC (V) C_L (pF) Min Typ. Max Min Max
Propagation delay
t_pLH
time
t_pHL
15
⎯
5.5 7.9 1.0
9.5
3.3 ± 0.3
50
⎯
8.0 11.4 1.0 13.0
⎯
ns
15
⎯
3.7 5.5 1.0
6.5
5.0 ± 0.5
50
⎯
5.2 7.5 1.0
8.5
Input capacitance
C_IN
⎯
⎯
4
10
⎯
10
pF
Power dissipation
capacitance
C_PD
(Note) ⎯
19
⎯
⎯
⎯
pF
Note: C_PD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I_{CC (opr)} = C_PD·V_CC·f_IN + I_CC/4 (per gate)
Noise Characteristics (input: t_r = t_f = 3 ns)
Characteristics
Symbol
Test Condition
Quiet output maximum dynamic V_OL
Quiet output minimum dynamic V_OL
Minimum high level dynamic input voltage
Maximum low level dynamic input voltage
V_OLP
V_OLV
V_IHD
V_ILD
C_L = 50 pF
C_L = 50 pF
C_L = 50 pF
C_L = 50 pF
Ta = 25°C
Unit
V_CC (V) Typ. Limit
5.0
0.3 0.8
V
5.0
−0.3 −0.8
V
5.0
⎯
3.5
V
5.0
⎯
1.5
V
Input Equivalent Circuit
INPUT
4
2007-10-01