SSM3K16TE_07 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Speed Switching Applications

500
300 Common source
VDS = 3 V
Ta = 25°C
100
50
30
⎪Y_fs⎪ – I_D
10
5
3
1
1
10
100
Drain current ID (mA)
1000
SSM3K16TE
I_DR – V_DS
250
Common source
VGS = 0 V
200 ^{Ta = 25°C}
D
150
G
100
IDR
S
50
0
0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4
Drain-Source voltage VDS (V)
C – V_DS
100
50
30
10
5
3
Common source
1 VGS = 0 V
f = 1 MHz
0.5 _{Ta = 25°C}
0.3
0.1
0.3 0.5 1
Ciss
Coss
Crss
3 5 10
30 50 100
Drain-Source voltage VDS (V)
5000
3000
toff
1000
500
tf
300
t – I_D
Common source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
100
ton
50
30
tr
10
0.1
1
10
100
Drain current ID (mA)
P_D – Ta
250
200
150
100
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
4
2007-11-01