SSM3K123TU Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

30
Common Source
10 VDS = 3 V
Ta = 25 °C
3
|Y_fs| – I_D
1
0.3
0.1
0.03
0.01
0.001
0.01
0.1
1
10
Drain current I_D (A)
5000
3000
1000
C – V_DS
Ciss
300
Coss
100
Crss
Common Source
30
Ta = 25 °C
f = 1 MHz
VGS = 0 V
10
0.1
1
10
100
Drain – Source voltage V_DS (V)
SSM3K123TU
I_DR – V_DS
10
Common Source
VGS = 0 V
1
D
I_DR
G
S
0.1
0.01
0.001
0.0001
0
100 °C
25 °C
−25 °C
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
Drain-Source voltage V_DS (V)
1000
toff
tf
100
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
RG = 4.7 Ω
ton
10
tr
1
0.01
0.1
1
10
Drain current I_D (A)
Dynamic Input Characteristic
10
Common Source
ID = 4.2A
Ta = 25°C
8
V_DS = 10 V
6
16 V
4
2
0
0
10
20
30
Total Gate Charge Qg (nC)
4
2007-11-01