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CRS15I30A Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type | |||
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10
Pulse test
iF â vF
3
Tj = 150°C
1 125°C
75°C
0.3
0.1
25°C
0.03
0.01
0
0.2
0.4
0.6
0.8
1.0
Instantaneous forward voltage vF (V)
Ta max â IF (AV)
Ceramic substrate (substrate size:
50 mm à 50 mm, soldering land: 2 mm à 2 mm)
160
Rectangular waveform
140
0° α 360°
120
IF (AV)
Conduction angle α
100
VR = 15 V
80
60
α = 60° 120°
180°
DC
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average forward current IF (AV) (A)
CRS15I30A
PF (AV) â IF (AV)
1.0
DC
0.8
180°
120°
0.6
α = 60°
0.4
Rectangular
waveform
0.2
0
0.0
0° α 360°
Conduction angle α
0.4
0.8
1.2
1.6
2.0
2.4
Average forward current IF (AV) (A)
Ta max â IF (AV)
Glass-epoxy substrate (substrate size:
50 mm à 50 mm, soldering land: 6 mm à 6 mm)
160
Rectangular waveform
140
0° α 360°
120
IF (AV)
Conduction angle α
VR = 15 V
100
80
120°
60
40
20 α = 60°
180°
DC
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average forward current IF (AV) (A)
Tâ max â IF (AV)
160
140
120
100
80
α = 60° 120°
60
Rectangular waveform
180°
DC
40
0° α360°
20
IF (AV)
Conduction angle α
0
VR = 15 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average forward current IF (AV) (A)
1000
500
300
rth (j-a) â t
Device mounted on a glass-epoxy board:
board size: 50 mm à 50 mm
Soldering land: 6.0 mm à 6.0 mm
board thickness: 1.6 mm
100
50
30
Device mounted on a ceramic board:
board size: 50 mm à 50 mm
10
Soldering land: 2.0 mm à 2.0 mm
board thickness: 0.64 mm
5
3
1
0.001
0.01
0.1
1
10
Time t (s)
100
1000
4
2013-11-01
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