2SK3878_10 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

R_{DS (ON)} − Tc
5
COMMON SOURCE
VGS = 10 V
PULSE TEST
4
3
ID = 9 A
2
4.5
2.3
1
0
−80 −40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3878
I_DR − V_DS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
1
3
VGS = 0 V
0.1
0
−0.4
−0.8
−1.2
−1.6
DRAIN−SOURCE VOLTAGE V_DS (V)
10000
1000
C − V_DS
Ciss
Coss
100
Crss
10
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
10
100
DRAIN−SOURCE VOLTAGE V_DS (V)
V_th − Tc
5
4
3
2
1 _{COMMON SOURCE}
VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P_D − Tc
200
160
120
80
40
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
VDS
400
COMMON SOURCE ²⁰
ID = 9 A
Tc = 25°C
PULSE TEST
16
300
100
12
200
VDD = 400 V
200
8
VGS
100
4
0
0
0
20
40
60
80
100
TOTAL GATE CHARGE Q_g (nC)
4
2010-05-06