2SK3667 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator Applications

R_{DS (ON)} – Tc
4
COMMON SOURCE
VGS = 10 V
PULSE TEST
3
2
ID = 7.5A
4
1
2
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3667
I_DR – V_DS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
5
3
1
VGS = 0, −1 V
0.1
0
−0.2 −0.4 −0.6 −0.8
−1.0 −1.2
DRAIN-SOURCE VOLTAGE V_DS (V)
10000
1000
100
CAPACITANCE – V_DS
Ciss
Coss
10 ^{COMMON SOURCE}
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V_DS (V)
V_th – Tc
5
4
3
2
COMMON SOURCE
1 ^{VDS = 10 V}
ID = 1 mA
PULSE TEST
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P_D – Tc
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
400
300
200
100
0
0
16
VDS
VDD = 100 V
12
200
400
8
VGS
COMMON SOURCE
ID = 7.5 A
4
Tc = 25°C
PULSE TEST
0
10
20
30
40
50
TOTAL GATE CHARGE Q_g (nC)
4
2004-12-07