2SC6100 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

1000
100
Trans_過ien_渡t T_熱he_抵rm_抗al_　R_re_thsis_-tan_twce r_th – t_w
2SC6100
(②2)
(①1)
10
1
0.01
0.1
こ_Cuの_rve過_s 渡_sho熱_uld抵_b抗_{e a}デ_ppー_lieタ_{d i}は_{n t}熱_her抵_ma抗_{l li}制_mit限_ed領_are域_a.にだけ適用されます
単_Sin発_gleパ_nル_onrス_ep測_eti定_tive　_pT_ua_ls=_e25_T℃_{a = 25°C}
①セラミック基板実装時
　⁽¹ï¼ˆ^)M2₍₂5^o5.^u4_.n4m^temm^dm×^on_×2^c25^e5.^r.4^a4m^mmim^cm×^b_×^oa0_0r._.d8_8.t_m,C_mu_{t C}P_uad_Pa6_d4_:5₆m₄₅m_m²)_m2 ₎
②FR4基板実装時
(2)Mounted on an FR4 board
　(2₍5_g._l4_asm_sm_ep×_ox2_y5_, .₁4_.m_{6 m}m_m×_{t t}1_h._i6_ct_k,,ガ_Cuラ_arス_eaエ_{: 6}ポ₄₅キ_mシ_m2),CuPad
645mm²ï¼‰
1
10
P_パuls_ルe w_スid_å¹th _twt_w(s)(s)
100
1000
Safe Operating Area
10
IC max (pulsed) ♦ 10 ms♦ _{1 ms♦100 μs♦} 10 μs♦
IC max (continuous)
1 ^{10 s♦*}
100 ms♦*
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
0.1
Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mmt thick, Cu area:
645 mm²). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
10
100
Collector-emitter voltage V_CE (V)
4
2010-06-22