2SC3076Y Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

I_C – V_BE
2.0
Common emitter
VCE = 2 V
1.5
1.0
0.5
Tc = 100°C 25
−55
0
0
0.4
0.8
1.2
1.6
Base-emitter voltage V_BE (V)
Safe Operating Area
5
IC max (pulsed)*
3
IC max (continuous)
1 ms*
10 ms*
1
DC operation
Tc = 25°C
100 ms*
0.5
0.3
0.1
0.05 *: Single nonrepetitive pulse
Tc = 25°C
0.03
Curves must be derated
linearly with increase in
temperature.
VCEO max
0.01
0.5 1
35
10
30 50 100
Collector-emitter voltage V_CE (V)
2SC3076
12
(1)
10
8
P_C – Ta
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
6
4
(2)
2
(3)
0
0
25
50
75 100 125 150 175
Ambient temperature Ta (°C)
4
2010-02-05