2SA1315_09 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Power Amplifier Applications Power Switching Applications

V_{BE (sat)} – I_C
−3
Common emitter
IC/IB = 20
−1
Ta = −55°C
−0.5
−0.3
25
100
−0.1
−0.01
−0.03
−0.1
−0.3
−1
Collector current I_C (A)
Safe Operating Area
−5
IC max (pulsed)*
−3 _{IC max (continuous)}
1 ms*
−1
−0.5
−0.3
1 s*
DC operation
Ta = 25°C
−0.1
10 ms*
100 ms*
−0.05
−0.03
*: Single nonrepetitive pulse
Ta = 25°C
−0.01 Curves must be derated
linearly with increase in
−0.005 temperature.
−0.003
−0.3
−1
−3
−10
VCEO max
−30 −100
Collector-emitter voltage V_CE (V)
2SA1315
−2.0
−1.6
Common emitter
VCE = −2 V
I_C – V_BE
−1.2
−0.8
Ta = 100°C 25
−55
−0.4
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.6
Base-emitter voltage V_BE (V)
P_C – Ta
1200
1000
800
600
400
200
0
0
40
80 120 160 200 240 280
Ambient temperature Ta (°C)
4
2009-12-21