U5ZA40C Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – TOSHIBA Zener Diode Silicon Diffused-Junction Type

160
140
120
100
80
60
40
20
0
0
T_L, Ta Max – P
Ta-P
Ta-L
1
2
3
4
5
Allowable power dissipation P (W)
Size
Solder round
a
Size
b
Substrate
Thickness c
Glass-Epoxy
Substrate
10 mm*10 mm
50 mm*50 mm
1.5 mm
TL
a
b
6
U5ZA40C
100
Ta = 25°C
Typical
10
V_Z – I_Z
1
0.1
0.01
36 37 38 39 40 41 42 43 44 45 46 47 48
Zener voltage V_Z (V)
100000
10000
1000
100
P_RSM – t_w
tw
Ta = 25°C
Rectangular Pulse
Design Recommended region
10
0.1
1
10
100
Pulse width (ms)
R_th – t
100
10
Rth (j-a)
1
Rth (j-D)
0.1
0.01
0.001 0.01
Typical
Rth (j-D): Transient
Thermal Resistance
between junction to anode
electrode.
0.1
1
10
100
1000
Time t (s)
I_F – V_F
100
Tj = 150°C
10
Tj = 100°C
Tj = 25°C
1
0.1
0.6
0.8
1
1.2
1.4
1.6
1.8
Instantaneous forward voltage V_F (V)
3
2003-02-17