U20DL2C53A Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Diode Stack (HED) Silicon Epitaxial Type

100
One cell
i_F – v_F
Tj = 150°C
10
100°C
75°C
25°C
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous forward voltage vF (V)
U20DL2C53A
P_{F (AV)} – I_o
24
sin
20
120°
180°
90°
16
60°
12
a = 30°
Rectangular
waveform
(one cell)
8
4
0
0
4
0° a 360°
Conduction
angle a
8
12
16
20
24
Average output rectified current I_o (A)
Tc max – I_o
160
140
120
100
a = 30°
80
Rectangular
waveform
(one cell)
60
60° 90° 120°
180°
sin
40
0° a 360°
20 _Conduction
angle a
0
0
4
8
12
16
20
24
Average output rectified current I_o (A)
Surge forward current (non-repetitive)
120
One c
ell
100
Single phase full
Sine wave
Ta 25°C
80
60
60 Hz
50 Hz
40
20
0
1
10
100
Number of cycles
10
One cell
5
3
r_{th (j-c)} – t
1
0.5
0.3
0.1
0.001 0.01
0.1
1
10
Time t (s)
100 1000
1000
100
10
1
3
C_j – V_R
f = 1 MHz
Ta = 25°C
One cell
10
100
Reverse voltage V_R (V)
2003-02-17