TPCA8055-H Datasheet, PDF (3/9 Pages) Toshiba Semiconductor – High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets

6. Electrical Characteristics
6.1. Static Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
I_GSS
V_GS = ±20 V, V_DS = 0 V

Drain cut-off current
I_DSS
V_DS = 30 V, V_GS = 0 V

Drain-source breakdown voltage
V_(BR)DSS I_D = 10 mA, V_GS = 0 V
30
V_(BR)DSX I_D = 10 mA, V_GS = -20 V
15
Gate threshold voltage
V_th
V_DS = 10 V, I_D = 1.0 mA
1.3
Drain-source on-resistance
R_DS(ON) V_GS = 4.5 V, I_D = 28 A

V_GS = 10 V, I_D = 28 A

6.2. Dynamic Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Min
C_iss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz

C_rss

C_oss

r_g
V_DS = 10 V, V_GS = 0 V, f = 5 MHz

t_r
See Figure 6.2.1.

t_on

t_f

t_off

TPCA8055-H
Typ. Max Unit

±0.1
µA

10


V



2.3
1.9
2.3
mΩ
1.5
1.9
Typ. Max Unit
6400 7700 pF
360 550
1200 
1.4
2.1
Ω
5.7

ns
16

11

73

Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Q_g
Q_gs1
Q_gd
Q_SW
V_DD ≈ 24 V, V_GS = 10 V, I_D = 56 A
V_DD ≈ 24 V, V_GS = 5 V, I_D = 56 A
V_DD ≈ 24 V, V_GS = 10 V, I_D = 56 A
Min Typ. Max Unit

91

nC

47


20


12


21

6.4. Source-Drain Characteristics (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed) (Note 5)
I_DRP

Diode forward voltage
V_DSF I_DR = 56 A, V_GS = 0 V
Note 5: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit


168
A


-1.2
V
3
2011-04-21
Rev.2.0