TPCA8025 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications

Electrical Characteristics (Ta = 25°C)
TPCA8025
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
I_DSS
V _{(BR) DSS}
V _{(BR) DSX}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±20 V, V_DS = 0 V
V_DS = 30 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = −20 V
V_DS = 10 V, I_D = 1 mA
V_GS = 4.5 V, I_D = 20 A
V_GS = 10 V, I_D = 20 A
V_DS = 10 V, I_D = 20 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
⎯ ±100 nA
⎯
⎯
10
μA
30
⎯
⎯
V
10
⎯
⎯
1.3
⎯
2.5
V
⎯
4.2
6
mΩ
⎯
2.7
3.5
40
80
⎯
S
⎯ 2200 ⎯
⎯
430
⎯
pF
⎯
690
⎯
t_r
V_GS ^{10 V}
t_on
0V
t_f
⎯
12
⎯
I_D = 20 A
V_OUT
⎯
22
⎯
ns
⎯
23
⎯
V_DD ≈ 15 V
t_off
Duty ≤ 1%, t_w = 10 μs
⎯
74
⎯
Q_g
⎯
49
⎯
Q_gs1
V_DD ≈ 24 V, V_GS = 10 V, I_D = 40 A
⎯
8.5
⎯
nC
Q_gd
⎯
16
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
⎯
I_DR = 40 A, V_GS = 0 V
Min Typ. Max Unit
⎯
⎯
120
A
⎯
⎯
−1.2
V
3
2008-06-27