TPCA8020-H Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) High-Efficiency DC／DC Converter Applications

Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
I_GSS
I_DSS
V _{(BR) DSS}
V _{(BR) DSX}
V_th
R_{DS (ON)}
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
V_GS = ±16 V, V_DS = 0 V
V_DS = 40 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = −20 V
V_DS = 10 V, I_D = 1 mA
V_GS = 4.5 V, I_D = 3.8 A
V_GS = 10 V, I_D = 3.8 A
V_DS = 10 V, I_D = 3.8 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
Rise time
Turn−on time
Switching time
Fall time
Turn−off time
Total gate charge
(gate−source plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
Gate switching charge
tr
V_GS^{10 V}
0V
I_D = 3.8 A
V_OUT
t_on
t_f
t_off
Q_g
Q_gs1
Q_gd
Q_sw
V_DD ∼− 20 V
Duty ^<= 1%, t_w = 10 µs
V_DD ∼− 32 V、V_GS = 10 V、I_D = 7.5 A
V_DD ∼− 32 V、V_GS = 5 V、I_D = 7.5 A
V_DD ∼− 32 V、V_GS = 10 V、I_D = 7.5 A
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
—
I_DR = 7.5 A, V_GS = 0 V
TPCA8020-H
Min Typ. Max Unit
⎯
⎯ ±10 µA
⎯
⎯
10
µA
40
⎯
⎯
V
25
⎯
⎯
1.1
⎯
2.3
V
⎯
27
35
mΩ
⎯
22
27
7.5
15
⎯
S
⎯ 650 ⎯
⎯
55
⎯
pF
⎯ 240 ⎯
⎯
3
⎯
⎯
9
⎯
ns
⎯
2
⎯
⎯
18
⎯
⎯
11
⎯
⎯
6.2
⎯
⎯
2.1
⎯
nC
⎯
2.7
⎯
⎯
3.5
⎯
Min Typ. Max Unit
—
—
30
A
—
— −1.2
V
3
2006-11-17