TPCA8006-H_06 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – Switching Regulator Applications

Electrical Characteristics (Ta = 25°C)
TPCA8006-H
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±20 V, V_DS = 0 V
⎯
⎯ ±100 nA
I_DSS
V_DS = 100 V, V_GS = 0 V
⎯
⎯ 100 µA
V _{(BR) DSS} I_D = 10 mA, V_GS = 0 V
100 ⎯
⎯
V
V_th
V_DS = 10 V, I_D = 1 mA
3.0
⎯
5.0
V
R_{DS (ON)} V_GS = 10 V, I_D = 9 A
⎯
41
67 mΩ
|Y_fs|
V_DS = 10 V, I_D = 9 A
7.5
15
⎯
S
C_iss
⎯ 780 ⎯
C_rss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
17
⎯
pF
C_oss
⎯ 390 ⎯
t_r
V_GS ^{10 V}
t_on
0V
t_f
⎯
3
⎯
I_D = 9 A
V_OUT
⎯
13
⎯
ns
⎯
2
⎯
V_DD ∼− 50 V
t_off
Duty ^<= 1%, t_w = 10 µs
⎯
13
⎯
Q_g
⎯
12
⎯
Q_gs1
V_DD ∼− 80 V, V_GS = 10 V, I_D = 18 A ^⎯
5.6
⎯
nC
Q_gd
⎯
4.0
⎯
Q_SW
⎯
6.9
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current Pulse
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
⎯
I_DR = 18 A, V_GS = 0 V
Min Typ. Max Unit
⎯
⎯
36
A
⎯
⎯ −1.7
V
3
2006-11-20