TPC8A03-H Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode

TPC8A03-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
I_DSS
V _{(BR) DSS}
V _{(BR) DSX}
V_th
R_{DS (ON)}
|Y_fs|
C_iss
C_rss
C_oss
rg
V_GS = ±20 V, V_DS = 0 V
V_DS = 30 V, V_GS = 0 V
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = −20 V
V_DS = 10 V, I_D = 1 mA
V_GS = 4.5 V, I_D = 8.5 A
V_GS = 10 V, I_D = 8.5 A
V_DS = 10 V, I_D = 8.5 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, V_GS = 0 V, f = 5 MHz
⎯
⎯ ±100 nA
⎯
⎯
100
μA
30
⎯
⎯
V
15
⎯
⎯
1.3
⎯
2.3
V
⎯
5.1
7.0
mΩ
⎯
4.1
5.6
27
54
⎯
S
⎯ 2640 3430
⎯
100 150
pF
⎯
610
⎯
⎯
1.0 1.5
Ω
t_r
V_GS ^{10 V}
t_on
0V
t_f
⎯
3.6
⎯
I_D = 8.5 A
V_OUT
⎯
11.0
⎯
ns
⎯
7.2
⎯
V_DD ≈ 15 V
t_off
Duty ≤ 1%, t_w = 10 μs
⎯
42
⎯
V_DD ≈ 24 V, V_GS = 10 V, I_D = 17 A ⎯
36
⎯
Q_g
V_DD ≈ 24 V, V_GS = 5 V, I_D = 17 A
⎯
19
⎯
Q_gs1
⎯
7.6
⎯
nC
Q_gd
V_DD ≈ 24 V, V_GS = 10 V, I_D = 17 A ⎯
5.0
⎯
Q_SW
⎯
8.4
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
⎯
I_DR = 1 A, V_GS = 0 V
I_DR = 17 A, V_GS = 0 V
Min Typ. Max Unit
⎯
⎯
68
A
⎯ − 0.4 − 0.6 V
⎯
⎯ − 1.2 V
3
2010-01-19