TPC8017-H Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications

Electrical Characteristics (Ta = 25°C)
TPC8017-H
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-ON time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0 V

 ±10 µA
I_DSS
V_DS = 30 V, V_GS = 0 V


10
µA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = −20 V
30


V
15


V_th
V_DS = 10 V, I_D = 1 mA
1.1

2.3
V
R_{DS (ON)}
V_GS = 4.5 V, I_D = 7.5 A
V_GS = 10 V, I_D = 7.5 A

7.3 9.5
mΩ

5.1 6.6
|Y_fs|
V_DS = 10 V, I_D = 7.5 A
19
38

S
C_iss
 1465 
C_rss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz

175

pF
C_oss

610

t_r
V_GS ^{10 V}
t_on
0V
t_f

4

I_D = 7.5 A
V_OUT

11

ns

10

V_DD ∼− 15 V
t_off
Duty ^<= 1%, t_w = 10 µs

38

V_DD ∼− 24 V, V_GS = 10 V, I_D = 15 A 
25

Q_g
V_DD ∼− 24 V, V_GS = 5 V, I_D = 15 A

14

Q_gs1

4.7

nC
Q_gd
V_DD ∼− 24 V, V_GS = 10 V, I_D = 15 A 
5.7

Q_SW

7.8

Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition

I_DR = 15 A, V_GS = 0 V
Min Typ. Max Unit


60
A


−1.2
V
3
2003-7-25