TPC8013-H_06 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

TPC8013-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±16 V, V_DS = 0 V
⎯
⎯
±10
μA
I_DSS
V_DS = 30 V, V_GS = 0 V
⎯
⎯
10
μA
V _{(BR) DSS}
V _{(BR) DSX}
I_D = 10 mA, V_GS = 0 V
I_D = 10 mA, V_GS = −20 V
30
⎯
⎯
V
15
⎯
⎯
V_th
V_DS = 10 V, I_D = 1 mA
1.1
⎯
2.3
V
R_{DS (ON)}
V_GS = 4.5 V, I_D = 7.5 A
V_GS = 10 V, I_D = 7.5 A
⎯
6.6
9.5
mΩ
⎯
5.4
6.5
|Y_fs|
V_DS = 10 V, I_D = 7.5 A
12.5 25
⎯
S
C_iss
⎯ 2380 ⎯
C_rss
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
⎯
410
⎯
pF
C_oss
⎯
980
⎯
t_r
V_GS ^{10 V}
t_on
0V
t_f
⎯
9.8
⎯
I_D = 7.5 A
V_OUT
⎯
21
⎯
ns
⎯
15
⎯
V_DD ∼− 15 V
t_off
Duty ^<= 1%, t_w = 10 μs
⎯
60
⎯
V_DD ∼− 24 V, V_GS = 10 V, I_D = 15 A ⎯
46
⎯
Q_g
V_DD ∼− 24 V, V_GS = 5 V, I_D = 15 A
⎯
26
⎯
Q_gs1
⎯
7.2
⎯
nC
Q_gd
V_DD ∼− 24 V, V_GS = 10 V, I_D = 15 A ⎯
12.2
⎯
Q_SW
⎯ 15.6 ⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
I_DRP
V_DSF
Test Condition
⎯
I_DR = 15 A, V_GS = 0 V
Min Typ. Max Unit
⎯
⎯
60
A
⎯
⎯
−1.2
V
3
2006-11-16