TLP570_07 Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – Programmable Controllers AC / DC−Input Module

Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Emitter−collector
breakdown voltage
Collector−base
breakdown voltage (TLP571)
Emitter−base
breakdown voltage (TLP571)
Collector dark current
Collector dark current (TLP571)
Collector dark current (TLP571)
DC forward current gain (TLP571)
Capacitance (collector to emitter)
Symbol
Test Condition
V_F
I_F = 10 mA
I_R
V_R = 5 V
C_T
V = 0, f = 1 MHz
V_(BR)CEO I_C = 1 mA
V_(BR)ECO I_E = 0.1 mA
V_(BR)CBO I_C = 0.1 mA
V_(BR)EBO I_E = 0.1 mA
I_CEO
I_CER
I_CBO
h_FE
C_CE
V_CE = 24 V
V_CE = 24 V, Ta = 85°C
V_CE = 24 V, Ta = 85°C
R_BE = 10 MΩ
V_CB = 10 V
V_CE = 5 V, I_C = 10 mA
V = 0, f = 1 MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Saturated CTR
Base photo−current (TLP571)
Collector−emitter
saturation voltage
Symbol
Test Condition
I_C / I_F
I_C / I_{F (sat)}
I_PB
V_{CE (sat)}
I_F = 1 mA, V_CE = 1 V
I_F = 10 mA, V_CE = 1 V
I_F = 1 mA, V_CB = 1 V
I_C = 10 mA, I_F = 1 mA
I_C = 100 mA, I_F = 10 mA
TLP570,TLP571
Min. Typ. Max. Unit
1.0 1.15 1.3
V
―
―
10
μA
―
30
―
pF
35
―
―
V
7
―
―
V
80
―
―
V
7
―
―
V
―
10 200 nA
―
―
300
μA
―
0.5
10
μA
― 0.01 ―
nA
―
50k
―
―
―
10
―
pF
MIn. Typ. Max. Unit
1000 2000 ―
%
500 ―
―
%
―
2
―
μA
―
―
1.0
V
0.3
―
1.2
3
2007-10-01