TLP320 Datasheet, PDF (3/7 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Transistor

TLP320,TLP320-2,TLP320-4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Forward current
Capacitance
Collector-emitter
breakdown voltage
Emitter-collector
breakdown voltage
Collector dark current
Capacitance collector to
emitter
Symbol
Test Condition
V_F
I_F = ±100 mA
I_F
V_F = ±0.7 V
C_T
V = 0, f = 1 MHz
V_{(BR) CEO} I_C = 0.5 mA
V_{(BR) ECO} I_E = 0.1 mA
I_CEO
C_CE
V_CE = 24 V
V_CE = 24 V, Ta = 85°C
V = 0, f = 1 MHz
Min. Typ. Max. Unit
—
1.4
1.7
V
—
2.5
20
µA
—
60
—
pF
55
—
—
V
7
—
—
V
—
10
100
nA
—
2
50
µA
—
10
—
pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Current transfer ratio
Collector-emitter
saturation voltage
Off-state collector current
CTR symmetry
Symbol
Test Condition
Min. Typ. Max. Unit
I_C / I_F
I_C / I_F
(high)
I_F = ±20 mA, V_CE = 1 V
I_F = ±100 mA, V_CE = 1 V
25
—
—
%
20
—
80
V_{CE (sat)}
I_C = 2.4 mA, I_F = ±20 mA
I_C = 2.4 mA, I_F = ±100 mA
—
—
0.4
V
—
—
0.4
I_C(off)
V_F = ± 0.7V, V_CE = 24 V
—
1
10
µA
(Note)
I_{C (ratio)}
I_C (I_F = -20mA) /
I_C (I_F = +20mA)
(Note) ^0.5
1
2
—
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Isolation voltage
(Note)
IC(ratio)
=
IC2(IF
IC1(IF
= IF2, VCE
= IF1, VCE
= 1V)
= 1V)
Symbol
C_S
R_S
BV_S
Test Condition
V_S = 0, f = 1 MHz
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
IF1
IF2
Min. Typ. Max.
—
0.8
—
5×10¹⁰ 10¹⁴
—
5000 —
—
— 10000 —
— 10000 —
Unit
pF
Ω
V_rms
V_dc
IC1
VCE
IC2
3
2002-09-25