TLP281_07 Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP281,TLP281-4
Absolute Maximum Ratings (Ta = 25℃)
CHARACTERISTIC
SYMBOL
RATING
TLP281
TLP281−4
UNIT
Forward Current
I_F
50
mA
Forward Current Derating
Pulse Forward Current
Reverse Voltage
Junction Temperature
∆I_F /°C
I_FP
V_R
T_j
−0.7 (Ta≥53°C) −0.5 (Ta≥25°C)
1
5
125
mA /°C
A
V
°C
Collector-Emitter Voltage
V_CEO
80
V
Emitter-Collector Voltage
V_ECO
7
V
Collector Current
I_C
Collector Power Dissipation
(1 Circuit)
P_C
50
mA
150
100
mW
Collector Power Dissipation
Derating(Ta≥25°C) (1 Circuit)
∆P_C /°C
−1.5
−1.0
mW /°C
Junction Temperature
T_j
125
°C
Operating Temperature Range
T_opr
−55~100
°C
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Ta≥25°C) (1 Circuit)
T_stg
T_sol
P_T
∆P_T /°C
−55~125
260 (10s)
200
170
−2.0
−1.7
°C
°C
mW
mW /°C
Isolation Voltage
(Note1)
BV_S
2500(AC,1min,R.H.≤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note1) Device considered a two terminal device : LED side pins shorted together and DETECTOR side pins shorted
together.
Individual Electrical Characteristics (Ta = 25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Forward Voltage
Reverse Current
Capacitance
V_F
I_F = 10 mA
1.0
I_R
V_R = 5 V
—
C_T
V = 0, f = 1 MHz
—
Collector-Emitter
V_{(BR) CEO} I_C = 0.5 mA
80
Breakdown Voltage
Emitter-Collector
V_{(BR) ECO} I_E = 0.1 mA
7
Breakdown Voltage
V_CE = 48 V,
Ambient Light Below
—
Collector Dark Current
(Note2)
I_CEO
(100 ℓx)
V_CE = 48 V, Ta = 85°C
Ambient Light Below
—
(100 ℓx)
Capacitance
(Collector to Emitter)
C_CE
V = 0, f = 1 MHz
—
(Note 2) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
TYP.
1.15
—
30
—
—
0.01
(2)
2
(4)
10
MAX. UNIT
1.3
V
10
μA
—
pF
—
V
—
V
0.1
(10)
μA
50
(50)
μA
—
pF
3
2007-10-01