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TLP281-4GB-TP Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE PC CARD MODEM(PCMCIA) | |||
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TLP281,TLP281-4
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
TLP281
TLP281â4
UNIT
Forward Current
IF
50
mA
Forward Current Derating
Pulse Forward Current (Note 1)
Reverse Voltage
Junction Temperature
âIF /°C
IFP
VR
Tj
â0.7 (Taâ¥53°C) â0.5 (Taâ¥25°C)
1
5
125
mA /°C
A
V
°C
Collector-Emitter Voltage
VCEO
80
V
Emitter-Collector Voltage
VECO
7
V
Collector Current
IC
Collector Power Dissipation
(1 Circuit)
PC
50
mA
150
100
mW
Collector Power Dissipation
Derating(Taâ¥25°C) (1 Circuit)
âPC /°C
â1.5
â1.0
mW /°C
Junction Temperature
Tj
125
°C
Operating Temperature Range
Topr
â55 to 100
°C
Storage Temperature Range
Lead Soldering Temperature
Total Package Power Dissipation
(1 Circuit)
Total Package Power Dissipation
Derating (Taâ¥25°C) (1 Circuit)
Tstg
Tsol
PT
âPT /°C
â55 to 125
260 (10s)
200
170
â2.0
â1.7
°C
°C
mW
mW /°C
Isolation Voltage
(Note 2)
BVS
2500(AC,1min,R.H.â¤60%)
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width ⤠100μs, frequency 100Hz
(Note 2) AC, 1 minute, R.H.â¤60%,Device considered a two terminal device : LED side pins shorted together and
DETECTOR side pins shorted together.
Individual Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Forward Voltage
Reverse Current
Capacitance
VF
IF = 10 mA
1.0
IR
VR = 5 V
â
CT
V = 0, f = 1 MHz
â
Collector-Emitter
V(BR) CEO IC = 0.5 mA
80
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector Dark Current
Capacitance
(Collector to Emitter)
V(BR) ECO IE = 0.1 mA
7
(Note 3)
ICEO
CCE
VCE = 48 V,
Ambient Light Below
(100 âx)
â
(Note 4)
VCE = 48 V, Ta = 85°C
Ambient Light Below
â
(100 âx)
(Note 4)
V = 0, f = 1 MHz
â
(Note 3) Because of the construction,leak current might be increased by ambient light.
Please use photocoupler with less ambient light.
(Note 4)Irradiation to marking side using standard light bulb.
TYP.
1.15
â
30
â
â
0.01
(2)
2
(4)
10
MAX. UNIT
1.3
V
10
μA
â
pF
â
V
â
V
0.1
(10)
μA
50
(50)
μA
â
pF
3
2010-08-27
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