TLP166J Datasheet, PDF (3/4 Pages) Toshiba Semiconductor – Photocoupler GaAs Ired + Photo−Triac

TLP166J
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Capacitance
Peak off−state current
Peak on−state voltage
Holding current
Critical rate of rise
of off−state voltage
Critical rate of rise
of commutating voltage
Symbol
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv / dt
dv / dt(c)
Test Condition
Min.
I_F=10mA
V_R=5 V
V=0, f=1MHz
V_DRM=600V
I_TM=70mA
―
V_in=240Vrms, Ta=85°C
I_T=15mA, V_in=60Vrms
1.0
―
―
―
―
―
(Note 3) ²⁰⁰
(Note 3) ^―
Typ.
1.15
―
30
30
1.7
0.6
500
0.2
Max. Unit
1.3
V
10
μA
―
pF
1000 nA
2.8
V
―
mA
― V / μs
― V / μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Capacitance input to output
Isolation resistance
Isolation voltage
(Note 3): dv / dt Test circuit
R_in
+
1
6
V_CC
-
120Ω
3
4
Symbol
I_FT
V_IH
I_IH
C_S
R_S
BV_S
Test Condition
V_T=6V
I_F=rated I_FT
I_F=rated I_FT
V_T=rated V_DRM
V_S=0, f=1MHz
V_S=500V, R.H.≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
Min. Typ. Max. Unit
―
―
10
mA
―
―
50
V
―
―
600
μA
―
0.8
―
pF
1×10¹² 10¹⁴
―
Ω
2500
―
―
Vrms
―
5000 ―
―
5000 ―
Vdc
V_in
5V, V_CC
R_L
0V
4kΩ
dv / dt (c)
dv / dt
3
2007-10-01