TLP163J Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs IRED and Photo-Triac

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Forward voltage
LED Reverse current
Capacitance
Peak off-state current
Peak on-state voltage
Detector
Holding current
Critical rate of rise of off-state
voltage
Critical rate of rise of
commutating voltage
V_F
I_R
C_T
I_DRM
V_TM
I_H
dv/dt
dv/dt(c)
I_F = 10 mA
V_R = 5 V
V = 0 V, f = 1 MHz
V_DRM = 600 V
I_TM = 70 mA
⎯
V_in = 240 Vrms, Ta = 85°C (Figure 1)
V_in = 60 Vrms, I_T = 15 mA (Figure 1)
TLP163J
Min Typ. Max Unit
1.0 1.15 1.3
V
⎯
⎯
10
μA
⎯
30
⎯
pF
⎯
10 1000 nA
⎯
1.7
2.8
V
⎯
0.6
⎯
mA
200 500
⎯
V/μs
⎯
0.2
⎯ V/μs
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
Inhibit voltage
Leakage in inhibited state
Turn-on time
Impulse noise durability
Symbol
Test Condition
I_FT
V_T = 3 V
V_IH I_F = Rated I_FT
I_IH
I_F = Rated I_FT, V_T = Rated V_DRM
t_ON
V_D = 3 → 1.5 V, R_L = 20 Ω,
I_F = Rated I_FT x 1.5
t_N = 1 μs,
V_N snubber condition 120 Ω+ 0.1 μF
(Note 3)
Min Typ. Max Unit
⎯
⎯
10
mA
⎯
⎯
20
V
⎯
200 600
μA
—
30
100
μs
— 2000 —
V
Isolation Characteristics (Ta = 25°C)
Characteristics
Capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
Test Condition
C_S
V_S = 0 V, f = 1 MHz
R_S
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
BV_S AC, 1 second, in oil
DC, 1 minute, in oil
Min
Typ. Max Unit
⎯
0.8
⎯
pF
1 × 10¹² 10¹⁴
⎯
Ω
2500
⎯
⎯
Vrms
⎯
5000 ⎯
⎯
5000 ⎯
Vdc
R_in
+
1
V_CC
120 Ω
−
3
6
V_in
R_L
4
4 kΩ
5 V, V_CC
0V
dv/dt(c) dv/dt
Figure 1 dv/dt Test Circuit
3
2014-09-22